Materials Fundamentals of Molecular Beam Epitaxy

Jeffrey Y. Tsao

Anno: 1993
Rilegatura: Paperback / softback
Pagine: 301 p.
Testo in English
Dimensioni: 229 x 152 mm
Peso: 540 gr.
  • EAN: 9780127016252
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Descrizione
The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.