Technology of Gallium Nitride Crystal Growth

Dirk Ehrentraut (Curatore)

Elke Meissner (Curatore)

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2012

Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

• Curatore: Dirk Ehrentraut, Elke Meissner
• Editore: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Collana: Springer Series in Materials Science
• Anno: 2012
• Rilegatura: Paperback / softback
• Pagine: 326 p.
• Dimensioni: 235 x 155 mm
• EAN: 9783642263897

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