Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987

Gary L. Harris (Curatore)

Cary Y.-W. Yang (Curatore)

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2012

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

• Curatore: Gary L. Harris, Cary Y.-W. Yang
• Editore: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Anno: 2012
• Rilegatura: Paperback / softback
• Pagine: 199 p.
• Dimensioni: 244 x 170 mm
• EAN: 9783642934087

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