Dopants and Defects in Semiconductors

di Matthew D. McCluskey (Autore)

Eugene E. Haller (Autore)

Taylor & Francis Ltd, 2021

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … an easy reading, broad introductory overview of the field" ?Materials Today "… well written, with clear, lucid explanations …" ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

• Autore: Matthew D. McCluskey, Eugene E. Haller
• Editore: Taylor & Francis Ltd
• Anno: 2021
• Rilegatura: Paperback / softback
• Pagine: 372 p.
• Dimensioni: 254 x 178 mm
• Peso: 453 gr.
• EAN: 9780367781439

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