Field-effect Self-mixing Terahertz Detectors

di Jiandong Sun (Autore)

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, 2016

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

• Autore: Jiandong Sun
• Editore: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Collana: Springer Theses
• Anno: 2016
• Rilegatura: Hardback
• Pagine: 126 p.
• Dimensioni: 235 x 155 mm
• EAN: 9783662486795

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