Field-Effect Transistors Technology: From Sustainability to Next-Generation VLSI Design

Ashish Raman (Curatore)

Prabhat Singh (Curatore)

Taylor & Francis Ltd, 2025

The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends. Features Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies. Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design. Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs. Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors. The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.

• Curatore: Ashish Raman, Prabhat Singh
• Editore: Taylor & Francis Ltd
• Anno: 2025
• Rilegatura: Hardback
• Pagine: 466 p.
• Dimensioni: 234 x 156 mm
• Peso: 1050 gr.
• EAN: 9781032876078

Testo in English