Nanoscale Semiconductors: Materials, Devices and Circuits

Balwinder Raj (Curatore)

Ashish Raman (Curatore)

Taylor & Francis Ltd, 2022

This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.

• Curatore: Balwinder Raj, Ashish Raman
• Editore: Taylor & Francis Ltd
• Anno: 2022
• Rilegatura: Hardback
• Pagine: 240 p.
• Dimensioni: 234 x 156 mm
• Peso: 508 gr.
• EAN: 9781032307541

Testo in English